Electrochemical properties of amorphous nitrogen-containing hydrogenated diamondlike-carbon films

The electrochemical impedance of thin-film electrodes made of amorphous nit rogen-containing diamondlike carbon (a-C:N:H) in H2SO4 solutions and the ki netics of redox reactions on these electrodes in the Fe(CN)(6)(3-/4-) syste m are studied. The amorphous diamondlike carbon films with an admixture of nitrogen are grown by a directed deposition from inductively coupled methan e-nitrogen plasma. The films' resistivity values determined from the ac imp edance of a-C:N:H/electrolyte contact practically coincided with those dete rmined from the current-voltage curves taken at the a-C:N:H/metal contact. With an increase in the nitrogen : methane ratio in the gas phase, both the electrical resistance and optical bandgap decrease from 3 X 10(10) to 5 X 10(6) ohm cm and from 1.3 to 0.6 eV, respectively Simultaneously, the conce ntration of electrically active point-defect centers in a-C:N:H increases s ignificantly and the reaction in the Fe(CN)(6)(3-/4-) system is facilitated .