The electrical conductivity, sigma, of CdTe semiconducting thin films (d =
90-1200 nm) prepared by physical vapor deposition onto unheated glass subst
rates was investigated. Depending on the source temperature, films with (11
1) texture or an amorphous structure were obtained. At room temperature, th
e values of sigma for as deposited films ranged from 10(-6) to 10(-4) Omega
(-1) m(-1). The effects of source temperature and post-deposition heat trea
tment on the temperature dependence of the electrical conductivity of the f
ilms were studied. By in situ measurement of film resistivity during heatin
g-cooling cycles, an irreversible dependence of sigma was revealed for the
films with amorphous structure. The results are discussed in relation with
film recrystallization during the annealing process. (C) 2000 Elsevier Scie
nce Ltd. All rights reserved.