The properties of InGaAsP/InP heterolasers with step-divergent waveguides

Authors
Golikova, EG Kureshov, VA Leshko, AY Livshits, DA Lyutetskii, AV Nikolaev, DN Pikhtin, NA Ryaboshtan, YA Slipchenko, SO Tarasov, IS Fetisova, NV
Citation
Eg. Golikova et al., The properties of InGaAsP/InP heterolasers with step-divergent waveguides, TECH PHYS L, 26(10), 2000, pp. 913-915
Citations number
8
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
TECHNICAL PHYSICS LETTERS
ISSN journal
10637850 → ACNP
Volume
26
Issue
10
Year of publication
2000
Pages
913 - 915
Database
ISI
SICI code
1063-7850(2000)26:10<913:TPOIHW>2.0.ZU;2-#
Abstract
InGaAsP/InP laser heterostructures with step-divergent waveguides and two s tressed quantum wells were obtained by metalorganic VPE. The lasers emittin g at 1.55 mu m provide for an intrinsic quantum yield of eta(i) = 85 %. An optical power of 5.2 W in the continuous operation mode was achieved at a l aser diode temperature of 10 degrees C. The internal optical losses in the laser heterostructure studied amount to 3.6 cm(-1), which is comparable wit h the level of losses in similar structures with uniform divergent waveguid es. (C) 2000 MAIK "Nauka / Interperiodica".