Current transfer processes in thin lutecium and terbium oxide films on silicon

Authors
Fedorenko, YG Otavina, LA Korenyuk, SV
Citation
Yg. Fedorenko et al., Current transfer processes in thin lutecium and terbium oxide films on silicon, TECH PHYS L, 26(10), 2000, pp. 916-918
Citations number
6
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
TECHNICAL PHYSICS LETTERS
ISSN journal
10637850 → ACNP
Volume
26
Issue
10
Year of publication
2000
Pages
916 - 918
Database
ISI
SICI code
1063-7850(2000)26:10<916:CTPITL>2.0.ZU;2-L
Abstract
The results of the experimental study of the current transfer processes in thin Lu2O3 and Tb2O3 films on silicon substrates are presented. It is shown that, depending on the experimental conditions, the process of either the thermionic-field or the over-barrier emission prevails. Illumination of the structure does not change the effective surface barrier height. The result s presented may be important for the practical applications of rare earth o xide-based thin-film systems. (C) 2000 MAIK "Nauka / Interperiodica".