A comparative study of the atomic hydrogen penetration into thin vanadium films and silicon oxide-gallium arsenide structures

It was established that the laws of atomic hydrogen penetration from an arc reflection discharge gap with a hollow cathode and self-heating element in to GaAs samples coated with a thin SiO2 film differ significantly from the laws observed for the hydrogenation of thin vanadium films. The amount of h ydrogen penetrating into the SiO2/GaAs system decreases with increasing ato mic hydrogen concentration in the gas phase. This is apparently related to a decrease in the probability of hydrogen atoms penetrating into the substr ate, which is suggested to drop significantly with decreasing atomic energy and/or increasing hydrogen content in a thin subsurface layer. (C) 2000 MA IK "Nauka/Interperiodica".