INTERFACE VIBRATIONAL-SPECTRUM INVESTIGATION ON REACTIVELY-SPUTTERED A-SI-H A-GE-H MULTILAYER FILMS/

In this paper, the interface vibrational spectrum in a reactive-sputte ring a-Si:H/a-Ge:H muitilayer was investigated using IR transmission a nd Raman scattering. It is shown that excess deformation is not found near the interface and there is no evidence for excess hydrogen at the a-Si:H/a-Ge:H interface. The thermal stability of a-Si:H/a-Ge:H multi layer films was also studied by using IR and X-ray diffraction spectra . It was found that the crystallization temperature of a multilayer wi th small layer thickness is higher than that of bulk a-Ge:H. (C) 1997 Elsevier Science S.A.