HOT-WALL EPITAXY-GROWN INDIUM-ANTIMONIDE FILMS

Indium antimonide films were grown by the hot wall epitaxy technique o nto KCl substrate kept at different temperatures. The experimental dep osition conditions are optimized. The electrical resistivity, Hall mob ility and carrier concentration as a function of temperature have been determined. Observations reveal that the films appear to be p-type an d show comparatively higher mobility when deposited at 553 K. Transmis sion electron micrographs of these films indicate grains of hexagonal shape. Crystallites as large as 0.25 mu m are obtained. The optical ga p of 0.045 eV for indium antimonide films has been observed. (C) 1997 Elsevier Science S.A.