SILICIDE FORMATION IN THIN-FILM PT-SI(111) STRUCTURE BY USXES DATA

Ultra-soft X-ray emission spectroscopy (USXES) and X-ray diffraction w ere applied for the investigation of solid phase interaction in thin-f ilm structure Pt/Si(111). Vacuum annealing at temperatures from 530 to 770 K for periods from 10 to 240 min resulted in the formation of Pt1 2Si5/Si, Pt12Si5/PtSi/Si and PtSi/Si structures. After irradiation wit h a xenon lamp in air, a Pt+ SiO2/Pt12Si5/PtSi/Si thin-film structure was observed. Ultra-soft X-ray emission spectra of platinum N-6,N-7 an d silicon L-2,L-3 from Pt12Si5 and PtSi thin films were obtained. The results are compared with spectra measured on elementary platinum and silicon. (C) 1997 Elsevier Science S.A.