Recent advances in the application of slow positron beams to the study of ion implantation defects in silicon

We review the most significant advances in the application of beam-based Po sitron Annihilation Spectroscopy (PAS) to ion implantation induced defects in silicon. Recent developments in the experimental technique and some prom inent success stories are highlighted. These include descriptions of 2-dete ctor Doppler broadening, enhanced depth resolution and beam lifetime measur ements and applications to ion beam dosimetry, SIMOX formation and impurity gettering. The review concludes with suggestions for future trends in PAS. The technique is currently enjoying a high profile in ion implantation res earch. However, the need for the PAS community to consolidate current under standing and develop further the measurement and interpretation of data is paramount if PAS is to be regarded as the technique of choice for probing o pen-volume defects in silicon.