Diffusion of zinc in InP, InAsP and InGaAs by the metal-organic vapor-phase diffusion technique

A new technique of zinc diffusion into InP, InAsP and InGaAs by metal-organ ic vapor-phase diffusion, whereby a low-pressure metal-organic vapor-phase epitaxy with dimethylzinc and phosphine is utilized as an open tube diffusi on system, is described. This technique allows the diffusion depth to be pr ecisely controlled in the submicrometer range, is easy to scale up, and giv es highly reproducible results. Results on the concentration dependence of the zinc diffusion coefficient, the activation of zinc accepters by anneali ng obtained from the diffusion profiles as well as the change of zinc incor poration near the surface under various diffusion conditions are presented.