Effect of implant temperature on extended defects created by ion implantation in silicon

Extended defects created by ion implantation have been shown to be dependen t on the implantation conditions and the annealing conditions. In this pape r, we study the effect of implant temperature on defects created by medium dose ion implantation in silicon. We report a difference in the type of ext ended defects created by identical Sn implants in samples subject to differ ent implant temperatures while very little difference is observed in the ty pe of defects created by Si implantation in silicon. A complete transmissio n electron microscopy characterisation of the defects was carried out showi ng rod-like defects for the Si implanted samples. In the case of the Sn imp lants, we observe a trend towards a higher density of rod-like defects and larger loops with increasing implant temperatures.