Energetics of extrinsic defects in Si and their role in nonequilibrium dopant diffusion

In this paper, we discuss the mechanisms by which small clusters evolve thr ough "magic" sizes into {113} defects and then, at sufficiently high dose l evels, transform into dislocation loops of two types. This ripening process is mediated by the interchange of free Si(int)s between different extended defects, leading to a decrease of their formation energy. A detailed analy sis of extrinsic defect energetics has been carried out and it is shown tha t Ostwald ripening is the key concept for understanding and simulating extr insic defect kinetics and thus predict TED evolution.