InAs quantum-dot lasers operating near 1.3 mu m with high characteristic temperature for continuous-wave operation

Authors
Chen, H Zou, Z Shchekin, OB Deppe, DG
Citation
H. Chen et al., InAs quantum-dot lasers operating near 1.3 mu m with high characteristic temperature for continuous-wave operation, ELECTR LETT, 36(20), 2000, pp. 1703-1704
Citations number
9
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
ELECTRONICS LETTERS
ISSN journal
00135194 → ACNP
Volume
36
Issue
20
Year of publication
2000
Pages
1703 - 1704
Database
ISI
SICI code
0013-5194(20000928)36:20<1703:IQLON1>2.0.ZU;2-2
Abstract
A high characteristic temperature with To of 126K under continuous-wave ope ration is obtained for an InAs/GaAs quantum dot laser. A triple-stacked act ive region with an energy separation of 95meV between the ground and first excited radiative transitions is used to achieve a ground state saturation gain at 300K of 13cm(-1), and high internal quantum efficiency of 74%.