Co-planar carbon nanotube hybrid molecular transistors fabricated in parallel

We show that a molecular combing process can be used to fabricate in parall el, in one step, a large number of co-planar carbon nanotube hybrid molecul ar transistors. The gate voltage is applied by the electrodes of a nanojunc tion thus increasing the miniaturisation of thr device. We show with such d evices that the bias coplanar grid is riot very active on metal-like nanotu bes and that the same conductance change can be obtained by deforming the t ube by the tip of all atomic force microscope. On the contrary, the grill i s very active on a semiconductor-like tube leading to transconductances of 160 nA/V.