k(parallel to)-resolved electronic structure of quasi-free 2-dimensional HfS2 clusters

Employing van der Waals epitaxy we grow quasi-free 2-dimensional clusters o f layered materials. The weak coupling between the layers enables the clust ers to reveal their intrinsic properties undisturbed by the underlying subs trate. Their orientations being well ordered allow k(parallel to)-resolved measurements. Applying angle-resolved photoemission in combination with sca nning tunneling microscopy to the same samples allows to study the evolutio n of the electronic structure with increasing cluster size. For 2D HfS2 clu sters grown on WSe2 we demonstrate that k(parallel to) dispersion already o ccurs for cluster diameters of approximate to 100 nm.