NONMETAL-METAL-NONMETAL TRANSITION AND LARGE NEGATIVE MAGNETORESISTANCE IN (GA, MN)AS GAAS/

Authors
OIWA A KATSUMOTO S ENDO A HIRASAWA M IYE Y OHNO H MATSUKURA F SHEN A SUGAWARA Y
Citation
A. Oiwa et al., NONMETAL-METAL-NONMETAL TRANSITION AND LARGE NEGATIVE MAGNETORESISTANCE IN (GA, MN)AS GAAS/, Solid state communications, 103(4), 1997, pp. 209-213
Citations number
22
Categorie Soggetti
Physics, Condensed Matter
Journal title
Solid state communications → ACNP
ISSN journal
00381098
Volume
103
Issue
4
Year of publication
1997
Pages
209 - 213
Database
ISI
SICI code
0038-1098(1997)103:4<209:NTALNM>2.0.ZU;2-C
Abstract
We have studied magnetic and transport properties of a series of Ga1-x MnxAs/GaAs samples with different Mn concentrations (x = 0.015-0.071). For Mn content higher than about 0.02, carrier(hole)-induced ferromag netism is observed. Samples with x = 0.035 and 0.043 behave as ferroma gnetic dirty metals. With further increase of Mn content above x simil ar to 0.05, the zero-field resistivity turns a semiconducting temperat ure dependence. Very large negative magnetoresistance is observed in n onmetallic samples near the metal-nonmetal transitions both in the low and the high Mn content regimes. (C) 1997 Elsevier Science Ltd.