A base transport model for ultra-thin-base SiGeHBT

Authors
Li, Y Kong, DY Zhen, J Xu, JY
Citation
Y. Li et al., A base transport model for ultra-thin-base SiGeHBT, INT J ELECT, 87(11), 2000, pp. 1281-1287
Citations number
6
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
INTERNATIONAL JOURNAL OF ELECTRONICS
ISSN journal
00207217 → ACNP
Volume
87
Issue
11
Year of publication
2000
Pages
1281 - 1287
Database
ISI
SICI code
0020-7217(200011)87:11<1281:ABTMFU>2.0.ZU;2-A
Abstract
The characteristics of parameters such as carrier temperature and diffusion coefficient in ultra-thin-base SiGe heterojunction bipolar transistors (HB Ts) are analysed according to the solution of the Boltzmann equation; a new model of base transport in SiGe HBTs, different from traditional ones is d escribed.