Effect of the polarization state on squeezed-state generation in GaAs

Authors
Gahir, HK Sen, P Andrews, JT Puri, RR
Citation
Hk. Gahir et al., Effect of the polarization state on squeezed-state generation in GaAs, J OPT B-QUA, 2(4), 2000, pp. 482-489
Citations number
30
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JOURNAL OF OPTICS B-QUANTUM AND SEMICLASSICAL OPTICS
ISSN journal
14644266 → ACNP
Volume
2
Issue
4
Year of publication
2000
Pages
482 - 489
Database
ISI
SICI code
1464-4266(200008)2:4<482:EOTPSO>2.0.ZU;2-Y
Abstract
We have theoretically analysed the effect of polarization of the initial st ate on squeezed-state generation. The analysis has been applied to a sample of GaAs irradiated by a KCl:Na laser tunable over the range 1.62-1.91 mu m . The ellipticity of error ellipse and time and power dependence of quadrat ure variance suggest that the circular polarization state is most suitable for squeezed-state generation. We have also extended our analysis to a homo dyne detection technique and have studied the power dependence of signal-to -noise ratio.