M. Sugimori et al., Preparation and crystal structure of chromium silicon selenide containing a B-12 icosahedron with a tunnel structure, J ORGMET CH, 611(1-2), 2000, pp. 547-550
Chromium silicon boron selenide has been prepared by the reaction of chromi
um diboride and selenium in an evacuated silica tube at a high temperature.
The compound is obtained as single crystals in a low yield. The X-ray stud
ies have shown that the structure consists of the three-dimensional framewo
rk with a large tunnel;md the filling component in the tunnels. The former
is made of Si coordinated by four silicon atoms, chromium atoms coordinated
by six selenium atoms, and B-12 icosahedra. The filling component has a st
rongly disordered structure and estimated to be a chain of B2Se3. Analysis
of the occupational factors of the filling component has indicated that the
composition of the compound is CrSi3(B-12)Se-12.(B2Se3)(1.33). (C) 2000 Pu
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