Calculated lifetimes of the first (v=1) hydrogen stretching excited state on hydrogen-covered H/Ge(111) germanium surface

Citation
Sc. Hong et al., Calculated lifetimes of the first (v=1) hydrogen stretching excited state on hydrogen-covered H/Ge(111) germanium surface, J CHIN CHEM, 47(4B), 2000, pp. 881-886
Citations number
65
Categorie Soggetti
Chemistry
Journal title
JOURNAL OF THE CHINESE CHEMICAL SOCIETY
ISSN journal
00094536 → ACNP
Volume
47
Issue
4B
Year of publication
2000
Pages
881 - 886
Database
ISI
SICI code
0009-4536(200008)47:4B<881:CLOTF(>2.0.ZU;2-J
Abstract
In the present study, we report the calculated lifetimes of the first hydro gen stretching excited state on a hydrogen-covered H/Ge(111) germanium surf ace using molecular dynamics simulation based on the Bloch-Redfield theory. The lifetime was found to be 20 microseconds at room temperature, four ord ers longer than the hydrogen stretches on a H/Si(111) silicon surface. In a ddition, the calculations for the Ge-D and Ge-T stretches gave lifetimes in the time scale of hundreds and tens of nanoseconds, respectively, at room temperature. The thermal effect and an effect of the Ge-Ge-H bending freque ncy in the calculated lifetimes are discussed.