Surface-enhanced photoemission in Schottky diodes with microrelief interfaces

Citation
Nl. Dmitruk et Sv. Mamykin, Surface-enhanced photoemission in Schottky diodes with microrelief interfaces, J VAC SCI B, 18(5), 2000, pp. 2411-2414
Citations number
12
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
ISSN journal
10711023 → ACNP
Volume
18
Issue
5
Year of publication
2000
Pages
2411 - 2414
Database
ISI
SICI code
1071-1023(200009/10)18:5<2411:SPISDW>2.0.ZU;2-B
Abstract
The internal photoemission current of Au-GaAs Schottky barriers with interf aces like a diffraction grating have been investigated. The surface plasmon -polariton excitation is shown to be an additional mechanism that contribut es to an increase in the internal photoemission current. The sharp edges at such interfaces lead to an enhancement of the electric field, which can re ach more than ten times that of a flat sample. (C) 2000 American Vacuum Soc iety. [S0734-211X(00)03305-9].