Dry via hole etching of GaAs using high-density Cl-2/Ar plasma

In this article, we report on a high etch rate GaAs via hole processes in a n electron cyclotron resonance system using a Cl-2/Ar plasma. The effects o f process parameters on the GaAs etch rate were investigated. The influence s of process parameters on the resultant profiles were also studied. The Ga As etch rate was found to increase as the Cl-2 percentage in the Cl-2/Ar pl asma, process pressure, and rf power or the microwave power increased. A ma ximum etch rate of 6.7 mum/min has been obtained from a sample etched using a microwave power, rf power, and process pressure of 800 W, 150 W, and 50 mTorr, respectively. The degree of anisotropy of the etched profile was con trolled by varying the process pressure and rf power. (C) 2000 American Vac uum Society. [S0734-211X(00)02005-9].