Characteristics of InAs quantum dots on GaAs/InP with different InAs coverage

Authors
Wang, XQ Du, GT Jin, Z Li, MT Yin, JZ Li, ZT Liu, SY Yang, SR
Citation
Xq. Wang et al., Characteristics of InAs quantum dots on GaAs/InP with different InAs coverage, J VAC SCI B, 18(5), 2000, pp. 2523-2526
Citations number
23
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
ISSN journal
10711023 → ACNP
Volume
18
Issue
5
Year of publication
2000
Pages
2523 - 2526
Database
ISI
SICI code
1071-1023(200009/10)18:5<2523:COIQDO>2.0.ZU;2-H
Abstract
In this article, a thin tensile GaAs interlayer was used to get narrower si ze distribution and regular arrangement of InAs quantum dots (QDs) on InP s ubstrate by low-pressure metalorganic chemical vapor deposition. The compar ison results of thr: photoluminescence spectrum and the atomic force micros copy image show better properties after using GaAs interlayer. Also investi gated were the surface behaviors of InAs QDs with different InAs coverage o n GaAs/InP in order to reveal the detailed information of InAs QDs. (C) 200 0 American Vacuum Society. [50734-211X(00)02205-8].