Plasma polymerized methylsilane I: Characterization of thin photosensitivefilms for advanced lithography applications

Authors
Monget, C Joubert, O Inglebert, RL
Citation
C. Monget et al., Plasma polymerized methylsilane I: Characterization of thin photosensitivefilms for advanced lithography applications, J VAC SCI B, 18(5), 2000, pp. 2534-2542
Citations number
42
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
ISSN journal
10711023 → ACNP
Volume
18
Issue
5
Year of publication
2000
Pages
2534 - 2542
Database
ISI
SICI code
1071-1023(200009/10)18:5<2534:PPMICO>2.0.ZU;2-I
Abstract
Plasma polymerized methylsilane (PPMS) films are promising photosensitive l ayers for 248 and 193 nm lithography applications. These a-Si1-xCx:H films are deposited in a low power plasma of methylsilane gas using a commercial tool. The effect of substrate temperature, pressure in the chamber and rf p ower injected in the source on optical properties and chemical composition of the PPMS films have been studied using spectroscopic ellipsometry and Fo urier transform infrared (FTIR) spectroscopy. FTIR experiments show that th e PPMS structure is organized around a SI:H network with intact methyl grou ps. The correlation between deposition parameters and PPMS films properties is discussed. (C) 2000 American Vacuum Society. [S0734-211X(00)01205-1].