Simulations of a two-junction system with non-Ohmic tunnel junctions for high- and low-impedance environments

Authors
Nakashima, H Uozumi, K
Citation
H. Nakashima et K. Uozumi, Simulations of a two-junction system with non-Ohmic tunnel junctions for high- and low-impedance environments, J VAC SCI B, 18(5), 2000, pp. 2593-2596
Citations number
12
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
ISSN journal
10711023 → ACNP
Volume
18
Issue
5
Year of publication
2000
Pages
2593 - 2596
Database
ISI
SICI code
1071-1023(200009/10)18:5<2593:SOATSW>2.0.ZU;2-E
Abstract
To find the energy-dependent tunnel rates we describe the effective potenti al energies of an electron tunneling through an ultrasmall capacitor in a t wo-junction system for the limits of high- and low-impedance environments. Using these effective potential energies, the current-voltage characteristi cs of the two-junction system are demonstrated. (C) 2000 American Vacuum So ciety. [S0734-211X(00)02405-7].