ATOMIC-STRUCTURE OF A STABLE HIGH-INDEX GE SURFACE - GE(103)-(4X1)

Based on scanning tunneling microscopy and surface X-ray diffraction, we propose a complex structural model for the Ge(103)-(4 x 1) reconstr uction. Each unit cell contains two (103) double steps, which gives ri se to the formation of stripes of Ge atoms oriented in the [<(3)over b ar 01>] direction. The stripes and the spaces between them are covered with threefold-coordinated Ge adatoms. Charge is transferred from the bulk-like edge atoms of the double steps to the adatoms. The formatio n of the reconstruction can be explained in terms of stress relief, ch arge transfer, and minimization of the dangling bonds. (C) 1997 Elsevi er Science B.V.