The formation and growth of one-monolayer-deep holes after the deposit
ion of Fe on a Cu(111) vicinal surface at 300 K are studied by scannin
g tunneling microscopy (STM). At low Fe coverages, hole formation star
ts between separate Fe islands grown at step edges. As hole formation
is accompanied by the creation of edge energy, it is assumed that the
tensile stress field between the adjacent Fe islands provides the driv
ing force for this process. At higher Fe coverages, another hole forma
tion process is induced by the strain field at Fe wires, resulting in
a step-up diffusion. Both hole-creating processes can be suppressed by
depositing Fe at lower temperatures and subsequently sealing Cu steps
and Fe wires by depositing Au. (C) 1997 Elsevier Science B.V.