WAFER DIMENSIONAL ANALYSIS FOR CHEMICAL-MECHANICAL PLANARIZATION

Authors
ZHANG Y GOLUBTSOV P WAGNER L YIN X PARIKH P STEPHENSON B
Citation
Y. Zhang et al., WAFER DIMENSIONAL ANALYSIS FOR CHEMICAL-MECHANICAL PLANARIZATION, Solid state technology, 40(7), 1997, pp. 179
Citations number
5
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Applied","Physics, Condensed Matter
Journal title
Solid state technology → ACNP
ISSN journal
0038111X
Volume
40
Issue
7
Year of publication
1997
Database
ISI
SICI code
0038-111X(1997)40:7<179:WDAFCP>2.0.ZU;2-A
Abstract
Many process variables affect chemical mechanical planarization (CMP) results. Such wafer dimensional characteristics as thickness variation , shape, and local surface curvature are closely correlated to removed film within wafer nonuniformity (WIWNU) and removal rate. Noncontact capacitive gauging technology also shows promise in mapping wafer geom etry changes after CMP. This technique is especially attractive for me tal layer thickness measurements where conventional techniques have li mitations.