MOCVD BASRTIO3 FOR GREATER-THAN-OR-EQUAL-TO-1-GBIT DRAMS

Authors
BILODEAU SM CARL R VANBUSKIRK P WARD J
Citation
Sm. Bilodeau et al., MOCVD BASRTIO3 FOR GREATER-THAN-OR-EQUAL-TO-1-GBIT DRAMS, Solid state technology, 40(7), 1997, pp. 235
Citations number
12
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Applied","Physics, Condensed Matter
Journal title
Solid state technology → ACNP
ISSN journal
0038111X
Volume
40
Issue
7
Year of publication
1997
Database
ISI
SICI code
0038-111X(1997)40:7<235:MBFGD>2.0.ZU;2-1
Abstract
A CVD process for barium strontium titanate (BST) was developed to pro duce conformal thin films for 1-Gbit DRAMs. The process uses metal-org anic precursors, liquid delivery, and point-of-use flash vaporization to obtain reproducible film stoichiometry. Good electrical results wer e achieved, including high storage density and low leakage currents at 1-Gbit DRAM operating voltages and temperatures. The process is both reproducible and robust.