LOW-TEMPERATURE POLYSILICON RESHAPES FPD PRODUCTION

Citation
Jg. Blake et al., LOW-TEMPERATURE POLYSILICON RESHAPES FPD PRODUCTION, Solid state technology, 40(7), 1997, pp. 253
Citations number
4
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Applied","Physics, Condensed Matter
Journal title
ISSN journal
0038111X
Volume
40
Issue
7
Year of publication
1997
Database
ISI
SICI code
0038-111X(1997)40:7<253:LPRFP>2.0.ZU;2-Y
Abstract
Many liquid crystal display (LCD) manufacturers are devoting considera ble effort to the development of low-temperature polysilicon (LTPS) te chnology because it promises to produce higher-performance displays at lower cost. The success of LTPS depends on new device structures, new processes, and process equipment designed specifically for this techn ology. Part 1 of this article (in SST's May 1997 issue) discussed LTPS deposition and crystallization. This part looks at necessary changes to other aspects of active matrix liquid crystal display (AMLCD) manuf acturing.