A simple and new 45 degrees homo-biepitaxial Y1Ba2Cu3Oy junction on yttrium-stabilized zirconia substrates

We have developed a new bi-epitaxial structure, namely YBCO (780 degrees C) /YBCO (600 degrees C)/YSZ tin-plane rotation 45 degrees) and YBCO (780 degr ees C)/YSZ tin-plane rotation 0 degrees) boundary. In comparison to the YBC O/CeO2/YSZ/MgO tin-plane rotation 45 degrees) and YBCO/MgO tin-plane rotati on 0 degrees) boundary previously developed in our laboratory, the new prep aration is much simpler and has many advantages. For one, this method avoid s the difficulty of lattice mismatch between the pure YBCO him and the MgO substrate. A clean 45 degrees rotation can be achieved without growing diff erent kinds of buffer layers. Furthermore, the first YBCO layer can be used as an endpoint indication during dry etching for device fabrication. Most importantly, the I-V curves taken at low temperatures show the RST behavior , with a high Je value (similar to 10(5) A/cm(2)) and ICRN product (similar to 1 mV) at 4.2 K. (C) 2000 Elsevier Science B.V. All rights reserved.