Formation of the Bi2Sr2Can-1CunOx (n=2-4) single phase and phase intergrowth in sputter deposited thin films

Citation
Z. Mori et al., Formation of the Bi2Sr2Can-1CunOx (n=2-4) single phase and phase intergrowth in sputter deposited thin films, PHYSICA C, 339(3), 2000, pp. 161-165
Citations number
9
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICA C
ISSN journal
09214534 → ACNP
Volume
339
Issue
3
Year of publication
2000
Pages
161 - 165
Database
ISI
SICI code
0921-4534(20001015)339:3<161:FOTB(S>2.0.ZU;2-K
Abstract
Superconducting B4Sr2Can-1CunOx (BSCCO) (n = 2-5) thin films were prepared by sputtering. phase intergrowth among n = 2-3, 3-4 and 4-5 phases was obse rved. The molar fraction of each phase in the mixed crystal of the deposite d films was determined by X-ray diffraction analyses and investigated as a function of O-2 gas pressure during sputtering. We investigated the changes of the superconducting properties by molar fraction of each phase. The fab rication conditions for selective growth of the single It = 2, 3 and 4 phas es in BSCCO thin film are discussed. (C) 2000 Elsevier Science B.V. All rig hts reserved.