Angle-resolved high-resolution electron-energy-loss study of In-adsorbed Si(111)-(4x1) and -(8x2) surfaces

Authors
Sakamoto, K Ashima, H Yeom, HW Uchida, W
Citation
K. Sakamoto et al., Angle-resolved high-resolution electron-energy-loss study of In-adsorbed Si(111)-(4x1) and -(8x2) surfaces, PHYS REV B, 62(15), 2000, pp. 9923-9926
Citations number
18
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICAL REVIEW B
ISSN journal
01631829 → ACNP
Volume
62
Issue
15
Year of publication
2000
Pages
9923 - 9926
Database
ISI
SICI code
0163-1829(20001015)62:15<9923:AHESOI>2.0.ZU;2-F
Abstract
The metallic In/Si(lll)-(4X1) surface is known to show a temperature-induce d transition into a (8X2) structure. In the present study, we observed a dr astic change of the surface free carrier density at 130 K that corresponds to the phase transition. In spite of the decrease in the free carrier densi ty, the (8X2) phase does not show a complete semiconducting character at 90 K. Moreover, we observed two surface phonon modes at 33 and 60 meV that ha ve different dipole activities for the (8X2) phase, and one phonon mode at 61 meV for the (4x1) phase.