Terahertz switching action of a double-barrier resonant tunneling device

Citation
P. Orellana et al., Terahertz switching action of a double-barrier resonant tunneling device, PHYS REV B, 62(15), 2000, pp. 9959-9961
Citations number
18
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICAL REVIEW B
ISSN journal
01631829 → ACNP
Volume
62
Issue
15
Year of publication
2000
Pages
9959 - 9961
Database
ISI
SICI code
0163-1829(20001015)62:15<9959:TSAOAD>2.0.ZU;2-U
Abstract
The response of an asymmetric double barrier resonant device to the passage of terahertz radiation is discussed. Within the bistable region the radiat ion is able to turn the current flowing through the system on or off, with an onset that depends on the bias, the strength of the incoming radiation, and its frequency.