An analytical approach to the quantification of electrostatic force microsc
opy and scanning surface potential microscopy images of systems with electr
ic potential inhomogeneity has been developed in order to determine the int
erface potential in a donor-doped Sigma5 SrTiO3 grain boundary. The voltage
dependencies of the electrostatic force gradient and surface potential ver
ify the solutions. The distance dependencies of force gradient and surface
potential were used to quantify the potential at the grain boundary-surface
junction and the depletion width. Both measurements yield the same propert
ies despite the difference in imaging mechanisms. The interface potential i
s shown to result from local charge rather than from a local variation in d
ielectric constant. The amount of charge implied by an interface potential
of 30 mV would render detection of associated defects impossible, but these
results represent a lower limit in intrinsic bulk grain boundary potential
.