The cohesive force and electronic conductance in nanowires modeled by soft-
and hard-wall confining potentials, under the influence of a magnetic fiel
d (magnetocohesion) and in the linear and nonlinear (finite applied voltage
) regimes, are studied. The appearance of force oscillations as a function
of the magnetic field and their correlation with the corresponding characte
ristics of the electronic conductance are demonstrated. For materials with
a strong Fermi-surface anisotropy (e.g., bismuth), it is predicted that whe
n the crystallographic axis associated with the largest diagonal element of
the effective-mass tensor is aligned along the direction of the wire, the
cohesive force increases dramatically (by an order of magnitude) compared t
o the case when that axis is perpendicular to the wire direction.