Large two-level magnetoresistance effect in doped manganite grain-boundaryjunctions

Citation
Jb. Philipp et al., Large two-level magnetoresistance effect in doped manganite grain-boundaryjunctions, PHYS REV B, 62(14), 2000, pp. R9248-R9251
Citations number
25
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICAL REVIEW B
ISSN journal
01631829 → ACNP
Volume
62
Issue
14
Year of publication
2000
Pages
R9248 - R9251
Database
ISI
SICI code
0163-1829(20001001)62:14<R9248:LTMEID>2.0.ZU;2-P
Abstract
We performed a systematic analysis of the tunneling magnetoresistance (TMR) effect in single grain-boundary junctions formed in epitaxial La2/3Ca1/3Mn O3 films deposited on SrTiO3 bicrystals. For magnetic fields H applied para llel to the gain-boundary barrier, an ideal two-level resistance switching behavior with sharp transitions is observed with a TMR effect of up to 300% at 4.2 K and still above 100% at 77 K. Varying the angle between H and the grain boundary results in differently shaped resistance vs H curves. The o bserved behavior is explained within a model of magnetic domain pinning at the grain-boundary interface.