Evidence of two-electron tunneling interference in Nb/InAs junctions

Authors
Badolato, A Giazotto, F Lazzarino, M Pingue, P Beltram, F Lucheroni, C Fazio, R
Citation
A. Badolato et al., Evidence of two-electron tunneling interference in Nb/InAs junctions, PHYS REV B, 62(14), 2000, pp. 9831-9834
Citations number
26
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICAL REVIEW B
ISSN journal
01631829 → ACNP
Volume
62
Issue
14
Year of publication
2000
Pages
9831 - 9834
Database
ISI
SICI code
0163-1829(20001001)62:14<9831:EOTTII>2.0.ZU;2-V
Abstract
The impact of junction transparency in driving phase-coherent charge transf er across diffusive semiconductor-superconductor junctions is demonstrated. We present conductivity data for a set of Nb-InAs junctions differing only in interface transparency. Our experimental findings are analyzed within t he quasiclassical Green's-function approach and unambiguously show the phys ical processes giving rise to the observed excess zero-bias conductivity.