Diffusional kinetics of SiGe dimers on Si(100) using atom-tracking scanning tunneling microscopy

Citation
Xr. Qin et al., Diffusional kinetics of SiGe dimers on Si(100) using atom-tracking scanning tunneling microscopy, PHYS REV L, 85(17), 2000, pp. 3660-3663
Citations number
13
Categorie Soggetti
Physics
Journal title
PHYSICAL REVIEW LETTERS
ISSN journal
00319007 → ACNP
Volume
85
Issue
17
Year of publication
2000
Pages
3660 - 3663
Database
ISI
SICI code
0031-9007(20001023)85:17<3660:DKOSDO>2.0.ZU;2-T
Abstract
Quantitative measurements of the diffusion of adsorbed mixed Ce-Si dimers o n the Si(100) surface have been made as a function of temperature using ato m-tracking scanning tunneling microscopy. These mixed dimers are distinguis hable from pure Si-Si dimers by their characteristic kinetics-a 180 degrees rotation between two highly buckled configurations. At temperatures at whi ch the mixed dimers diffuse, atomic-exchange events occur, in which the Ge atom in the adsorbed dimer exchanges with a substrate Si atom. Reexchange c an also occur when the diffusing Si-Si dimer revisits the original site of exchange.