Origin of surface conductivity in diamond

Citation
F. Maier et al., Origin of surface conductivity in diamond, PHYS REV L, 85(16), 2000, pp. 3472-3475
Citations number
27
Categorie Soggetti
Physics
Journal title
PHYSICAL REVIEW LETTERS
ISSN journal
00319007 → ACNP
Volume
85
Issue
16
Year of publication
2000
Pages
3472 - 3475
Database
ISI
SICI code
0031-9007(20001016)85:16<3472:OOSCID>2.0.ZU;2-X
Abstract
Hydrogen-terminated diamond exhibits a high surface conductivity (SC) that is commonly attributed to the direct action of hydrogen-related accepters. We give experimental evidence that hydrogen is only a necessary requirement for SC; exposure to air is also essential. We propose a mechanism in which a redox reaction in an adsorbed water layer provides the electron sink for the subsurface hole accumulation layer. The model explains the experimenta l findings including the fact that hydrogenated diamond is unique among all semiconductors in this respect.