Hydrogen-terminated diamond exhibits a high surface conductivity (SC) that
is commonly attributed to the direct action of hydrogen-related accepters.
We give experimental evidence that hydrogen is only a necessary requirement
for SC; exposure to air is also essential. We propose a mechanism in which
a redox reaction in an adsorbed water layer provides the electron sink for
the subsurface hole accumulation layer. The model explains the experimenta
l findings including the fact that hydrogenated diamond is unique among all
semiconductors in this respect.