Comment on "charged impurity-scattering-limited low-temperature resistivity of low-density silicon inversion layers"

Authors
Gold, A Dolgopolov, VT
Citation
A. Gold et Vt. Dolgopolov, Comment on "charged impurity-scattering-limited low-temperature resistivity of low-density silicon inversion layers", PHYS REV L, 85(16), 2000, pp. 3541-3541
Citations number
10
Categorie Soggetti
Physics
Journal title
PHYSICAL REVIEW LETTERS
ISSN journal
00319007 → ACNP
Volume
85
Issue
16
Year of publication
2000
Pages
3541 - 3541
Database
ISI
SICI code
0031-9007(20001016)85:16<3541:CO"ILR>2.0.ZU;2-J