Nearly in-plane photoluminescence studies in asymmetric semiconductor microcavities

The photoluminescence from asymmetric microcavities consisting of AlAs/GaAs Bragg mirror and InGaAs/InGaAsP quantum-well cavity layer was studied in d ifferent geometry. The cavity mode in the nearly in-plane photoluminescence is explained by the constructive interference for light leaving the sample near the angle of total reflection. The vacuum Rabi-splitting, the intensi ty enhancement of the cavity mode and the motional narrowing are demonstrat ed in the temperature-dependent photoluminescence, hence obtaining initial evidences of strong coupling between the exciton and the cavity mode in the nearly in-plane direction. Our studies also suggest that the linear disper sion model provides a better description of the exciton-photon interaction of microcavities in the in-plane direction. (C) 2000 Elsevier Science Ltd. All rights reserved.