Quasi-epitaxial growth of quaterthiophene thin films by organic molecular beam deposition

Citation
A. Sassella et al., Quasi-epitaxial growth of quaterthiophene thin films by organic molecular beam deposition, SYNTH METAL, 115(1-3), 2000, pp. 69-73
Citations number
16
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
SYNTHETIC METALS
ISSN journal
03796779 → ACNP
Volume
115
Issue
1-3
Year of publication
2000
Pages
69 - 73
Database
ISI
SICI code
0379-6779(20001101)115:1-3<69:QGOQTF>2.0.ZU;2-H
Abstract
A study of thin films of quaterthiophene grown by organic molecular beam de position on different substrates under highly controlled growth conditions is presented. Polarized absorption measurements reveal a complete macroscop ic orientation of the films deposited on potassium acid phtalate (KAP) sing le crystals. X-ray diffraction measurements have been performed on films de posited on different substrates and the results interpreted in relation wit h the optical properties. Epitaxial growth is demonstrated for the films de posited on KAP combining the results of optical and structural analysis. (C ) 2000 Elsevier Science S.A. All rights reserved.