AC conductivity of vacuum deposited phenylene-vinylene oligomers/porous silicon structures

Citation
V. Parkhutik et al., AC conductivity of vacuum deposited phenylene-vinylene oligomers/porous silicon structures, SYNTH METAL, 115(1-3), 2000, pp. 93-96
Citations number
10
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
SYNTHETIC METALS
ISSN journal
03796779 → ACNP
Volume
115
Issue
1-3
Year of publication
2000
Pages
93 - 96
Database
ISI
SICI code
0379-6779(20001101)115:1-3<93:ACOVDP>2.0.ZU;2-D
Abstract
The electrical impedance of thin films of phenylene-vinylene oligomer (PVO) vacuum-deposited on to porous silicon (PS) substrates is studied in a wide range of temperatures (10-350 K) and ac electric field frequencies. It is shown that the PVO films are susceptible to the influence of the environmen t - its conductivity decreases orders of magnitude when the atmosphere is e vacuated. The data of measurements are analyzed using the physical model wh ich implies the participation of both PVO and PS layers in the electrical c onductivity process. (C) 2000 Elsevier Science S.A. All rights reserved.