S. Musumeci et al., SWITCHING-BEHAVIOR IMPROVEMENT OF INSULATED GATE-CONTROLLED DEVICES, IEEE transactions on power electronics, 12(4), 1997, pp. 645-653
MOSFET's and insulated gate bipolar transistor (IGBT) devices are incr
easingly used in electronic circuits due to both their easy driving an
d ability to handle high currents and voltages at high-switching frequ
encies. This paper deals with a new driver technique that allows optim
ization of the switching speed, reduction of the energy losses during
the switching time, and limitation of the electromagnetic interference
(EMI). First, an analysis of voltage- and current-switching waveforms
of gate-insulated devices is performed. Then, a method of controlling
voltage and current slopes independently is shown using the ''one-cyc
le'' method or a suitable adaptive-driving technique based on a phase-
locked loop (PLL) approach. These techniques were adopted in order to
allow correct generation of the gate signals regardless of the operati
ng conditions. Finally, practical results of the proposed driving circ
uit obtained using a single IGBT switch chopper are presented.