Diluted magnetic III-V semiconductors

During recent years diluted magnetic semiconductors based on III-V compound s have been of considerable interest. In this respect we review the basic p roperties of these materials, which are nearly exclusively Mn-based systems , such as GaMnAs, InMnAs, GaMnSb, and GaN:Mn. We discuss the nature of Mn i mpurity. Different Mn centers are considered and experimental pieces of evi dence suggesting the dominating role of Mn (d(5)) configuration are given. Then we analyze s, p-d exchange, together with resulting magnetooptical pro perties tin particular absorption edge slitting for heavily p-type GaMnAs). The coupling between Mn ions (d-d exchange) and ferromagnetic ordering obs erved in InMnAs and GaMnAs is the next subject. Some mechanisms responsible for this ordering ale presented. Finally we discuss transport properties a nd some selected problems of quantum structures based on III-V diluted magn etic semiconductors.