Single-photon detection in a range of submillimeter waves (lambda = 0.17-0.
20 mm) is demonstrated by using lateral semiconductor quantum dots fabricat
ed on a high-mobility GaAs/AlGaAs single heterostructure crystal. When a su
bmillimeter photon is absorbed by the quantum dot while it is operated as a
single-electron transistor, it switches on (or off) the conductance throug
h the quantum dot. An incident flux of 0.1 photons/s on an effective detect
or area, (0.1 mm)(2), is detected with al ms time resolution. The effective
noise equivalent power is roughly estimated to reach on the order of 10(-2
2) W/Hz(1/2), a value superior to the ever reported best values of conventi
onal detectors by a factor more than 10(4).