Nitrogen-induced enhancement of the free electron concentration in sulfur implanted GaNxAs1-x

Authors
Yu, KM Walukiewicz, W Shan, W Wu, J Ager, JW Haller, EE Geisz, JF Ridgway, MC
Citation
Km. Yu et al., Nitrogen-induced enhancement of the free electron concentration in sulfur implanted GaNxAs1-x, APPL PHYS L, 77(18), 2000, pp. 2858-2860
Citations number
21
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
00036951 → ACNP
Volume
77
Issue
18
Year of publication
2000
Pages
2858 - 2860
Database
ISI
SICI code
0003-6951(20001030)77:18<2858:NEOTFE>2.0.ZU;2-F
Abstract
We have achieved a large increase of the activation efficiency of sulfur at oms implanted into GaNxAs1-x thin films. For thin films with only 0.8% N co ntent, we find a maximum free electron concentration of > 6x10(18) cm(-3) f or implanted S concentration higher than 10(19) cm(-3), about 20 times larg er than that in semi-insulating GaAs implanted and annealed under the same conditions. This large increase of the free electron concentration can be q uantitatively explained with the recently developed band anticrossing model . (C) 2000 American Institute of Physics. [S0003-6951(00)02544-4].