Effect of temperature on the optical properties of (InGa)(AsN)/GaAs singlequantum wells

InxGa1-xAs1-yNy/GaAs single quantum wells emitting at room temperature in t he wavelength range lambda=(1.3-1.55) mum have been studied by photolumines cence (PL). By increasing temperature, we find that samples containing nitr ogen have a luminescence thermal stability and a room temperature emission efficiency higher than that of the corresponding N-free heterostructures. T he temperature dependence of the PL line shape shows a progressive carrier detrapping from localized to extended states as T is increased. Finally, th e extent of the thermal shift of the free exciton energy for different y in dicates that the electron band edge has a localized character which increas es with nitrogen content. (C) 2000 American Institute of Physics. [S0003-69 51(00)00744-0].