Suppression of intervalley scattering in Ga(As)Sb quantum wells

Citation
Kc. Hall et al., Suppression of intervalley scattering in Ga(As)Sb quantum wells, APPL PHYS L, 77(18), 2000, pp. 2882-2884
Citations number
15
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
00036951 → ACNP
Volume
77
Issue
18
Year of publication
2000
Pages
2882 - 2884
Database
ISI
SICI code
0003-6951(20001030)77:18<2882:SOISIG>2.0.ZU;2-E
Abstract
Femtosecond time-resolved reflectivity was measured near the 1.55 mum absor ption edge of several GaAsxSb1-x/AlSb quantum well samples. On the basis of differences in the reflectivity recovery kinetics and plateau values, we d educe that Gamma -L intervalley scattering can be effectively suppressed fo r x greater than or equal to0.19. This is consistent with calculations inco rporating confinement and strain effects which give L-Gamma energy separati ons of 29 (x=0) and 109 meV (x=0.19). Suppression of intervalley scattering can lead to increased internal quantum efficiency and higher carrier mobil ity in 1.55 mum based devices. (C) 2000 American Institute of Physics. [S00 03-6951(00)04244-3].